Vidicons Patents (Class 148/DIG172)
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Patent number: 5532177Abstract: Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.Type: GrantFiled: July 7, 1993Date of Patent: July 2, 1996Assignee: Micron Display TechnologyInventor: David A. Cathey
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Patent number: 5466613Abstract: A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.Type: GrantFiled: January 10, 1995Date of Patent: November 14, 1995Assignees: Nippon Hoso Kyokai, Mitsubishi Denki Kabushiki KaishaInventors: Fumihiko Andoh, Kazunori Miyakawa, Hidekazu Yamamoto, Masao Yamawaki
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Patent number: 5455196Abstract: A method of forming an array of electron field emitters at a face of a semiconductor layer is disclosed. The method includes the steps of: providing a semiconductor workpiece having a plurality of field emitter sites on a face thereof; for each site, forming a conductive column having a base coupled to the site and an upstanding end opposed to the base; for each conductive column, forming a metallic column on the upstanding end of the conductive column; depositing an electrically conductive polymer layer over the workpiece; etching the electrically conductive polymer layer to selectively expose the metallic columns; placing the workpiece in an electrolytic etchant solution capable of etching the metallic columns; applying an electric potential between the conductive polymer layer and an anode electrode in the etchant to etch the metallic columns into a respective plurality of sharp emitter tips; and removing the conductive polymer layer.Type: GrantFiled: March 17, 1994Date of Patent: October 3, 1995Assignee: Texas Instruments IncorporatedInventor: Gary A. Frazier
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Patent number: 4689873Abstract: An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.Type: GrantFiled: August 27, 1985Date of Patent: September 1, 1987Assignee: RCA CorporationInventor: William M. Kramer
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Patent number: 4608749Abstract: A method of manufacturing a "two-level" solid-state image pickup device wherein a portion of a first metallic electrode electrically connected to a signal storage region is made to project to the highest position above a substrate on which it is formed. A coating of an organic insulating film is then applied to produce a flat surface. The entire surface of the organic film is then etched to expose the projections of the first metallic electrode. A second metallic electrode constituting a pixel electrode is connected to the first electrode at the exposed portion thereof.Type: GrantFiled: August 22, 1984Date of Patent: September 2, 1986Assignee: Kabushiki Kaisha ToshibaInventors: Nozomu Harada, Yoshiaki Komatsubara
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Patent number: 4547957Abstract: An imaging device includes a wafer of single crystal semiconductor material having a first surface with an input surfacing region which extends into the wafer from the first surface and a second surface with a charge storage portion which includes a plurality of discrete charge storing regions which extend into the wafer of the second surface. The wafer includes a potential barrier within the input signal sensing portion for controlling blooming. The wafer is improved by including a passivation region within the input sensing portion for stabilizing the energy level of the conductivity band of the minority carriers at the Fermi energy level of the semiconductor wafer. Additionally, an electrical leakage reduction region extends into the wafer from the second surface. The leakage reduction region is contiguous with each of the discrete charge storage regions.Type: GrantFiled: August 1, 1984Date of Patent: October 22, 1985Assignee: RCA CorporationInventors: Eugene D. Savoye, Charles M. Tomasetti